Перегляд за автором "Khivrych, V.I."

Сортувати за: Порядок: Результатів:

  • Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide 
    Litovchenko, P.G.; Wahl, W.; Groza, A.A.; Dolgolenko, A.P.; Karpenko, A.Ya.; Khivrych, V.I.; Litovchenko, O.P.; Lastovetsky, V.F.; Sugakov1, V.I.; Dubovy, V.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of ...
  • Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon 
    Dotsenko, Yu.P.; Ermakov, V.M.; Gorin, A.E.; Khivrych, V.I.; Kolomoets, V.V.; Machulin, V.F.; Panasjuk, L.I.; Prokopenko, I.V.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects ...
  • Ultrasound influence on exciton emission of GaP light diodes 
    Gontaruk, O.M.; Khivrych, V.I.; Pinkovska, M.B.; Tartachnyk, V.P.; Olikh, Ya.M.; Vernydub, R.M.; Opilat, V.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while ...